Ultra High Vacuum Chemical Vapor Deposition
SaveSavedRemoved 0
Deal Score0
The cold wall, ultra high vacuum chemical vapor deposition chamber is used mainly for nanowire growth. The available growth and doping precursors are SiH4, GeH4, PH3, and B2H6. A resistive graphite substrate heater encased in pyrolytic boron-nitride allows for growth temperatures up to 700 °C. The tool can operate in dual mode: ultra-high vacuum, used for epi- growth, and low pressure (up to 10 Torr), used for nanowire growth.
